1-16

1：ホトリソグラフィにおける実測溶解速度を用いたデフォーカスシミュレーションの検討---電子情報通信学会

2：ホトレジストの感光パラメータ（A,B,C）測定装置の開発---電子情報通信学会

3：ホトレジスト現象パラメータ測定システムの開発---電子情報通信学会

4：P.E.B.プロセスにおけるホトレジストの感光剤の拡散長の推算---電子情報通信学会

5：ホトリソグラフィ用科学増幅レジストのシミュレーションパラメータ---電子情報通信学会

6：厚膜レジストにおける実測溶解速度を用いたプロキシミティ・シミュレーションの検討---電気学会論文誌

7：Developement of Photochemical Analysys System for F₂-Excimer Laser Lithography Process---The Japan Society of Applied Physics

8：Approach for High-sesolution of Chemically Amplified Resists Using Rate Editor Software---The Japan Society of Applied Physics

9：Resist Metrogy for Lithography Simulation,Part2 : Development Parameter Measurements---SPIE

10：Development of Analysis System for F₂-Excimer Laser Photochemical Processes---SPIE

11：Study of Proximity Lithography Simulations Using Measurements of Dissolution Rate and Calculation of the Light Intensity Distribution in the Photoresist---SPIE

12：Measurement of Parameters for Simulation of 193nm Lithography Using Fourier Transform Infarated Baking System---Japanese Jarnal of Applied Physics

13：Analysis of Deprotection Reaction in Chemcally Amplified Resists Using an Fourier Transform Infarated Spectmeter with an Exposure Tool---Japanese Jarnal of Applied Physics

14：Measurements of Parameters for Simulation of Deep UV Lithography Using a FT-IR Baking System---SPIE

15：Analysis of Deprotection Reaction for Chemically Amplified Resist by Using FT-IR Spectrometer with Exposure Tool---SPIE

16：Study of Deplotection Reaction during Exposure in Chemically Amplified Resist for Lithography Simulation---Journal of Photopolymer Sience and Technology