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1: Measurement and analysis of development rates
Responds to resists on the Si substrate, multilayer substrate, Al substrate, and ARC.
2: Developing characteristic analysis
Measurement of γ value, Eth and discrimination curves and calculation of development contrast (tanθ)
3: Determination of accurate model parameters
Determination of development parameters, diffusion lengths, and surface insoluble parameters
4: Creation of data tables and transfer of data to the simulator
5: Automatic supply and discharge system for developer
6: Automatic insertion of wafers and substrate sizes of 4 to 8 inches (12 inches compatible)
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